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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
161,497 pcs
|
161497 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
916 pcs
|
916 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request | |
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain Current, Pulsed | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| FET Type | |
| Gate-Source Voltage (Continuous) | |
| Gate-Source Voltage (Non-Repetitive) | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Junction and Storage Temperature | |
| Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Rds On (Max) @ Id, Vgs | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (Maximum @ VGS=0, VDS=60 V, TJ=125 °C) | |
| Zero Gate Voltage Drain Current (Maximum @ VGS=0, VDS=60 V, TJ=25 °C) |
The 2N7002LT1 is an N-Channel enhancement-mode MOSFET from On Semiconductor, designed for small signal switching applications. It features a drain-source breakdown voltage of 60V and a continuous drain current of 115mA at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 7.5 ohms at Vgs=10V and Id=500mA, and a gate threshold voltage of 2.5V at Id=250µA. The device offers a maximum input capacitance of 50pF at Vds=25V, making it suitable for high-speed switching.
The MOSFET is housed in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59). It supports a junction temperature range of -55°C to +150°C. Power dissipation is 225mW on an FR-5 board and 300mW on an alumina substrate.
The drain-source breakdown voltage is 60V minimum at VGS=0V and ID=10µA.
The maximum continuous drain current is 115mA at case temperature 25°C.
It is available in a surface-mount SOT-23-3 package (TO-236-3, SC-59).
The operating junction and storage temperature range is -55°C to +150°C.
Yes, the datasheet states the device is RoHS compliant and Pb-free.