2N7002L The 2N7002L is an N-channel enhancement mode MOSFET from onsemi. It features 60V drain-source breakdown voltage, 115mA continuous drain current, and 7.5Ω max on-resistance in a SOT-23-3 surface-mount package.
Mfr Part #:

2N7002L

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N7002L is an N-channel enhancement mode MOSFET from onsemi. It features 60V drain-source breakdown voltage, 115mA continuous drain current, and 7.5Ω max on-resistance in a SOT-23-3 surface-mount package.
✓ Total Stock: 1,420,824 pcs
$ Price Range: $0.12

2N7002L Available from 4 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,408,159 pcs
1408159 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
12,000 pcs
12000 pcs On Request 1 On Request On Request 21+ On Request On Request
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505 pcs
505 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
160 pcs
$0.12 ℹ
Qty Price
0+ 0.12
160 pcs $0.12
QtyPrice
0+ 0.12
1 On Request On Request On Request On Request On Request

2N7002L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

2N7002L Description

Short technical summary and product information.

The 2N7002L from onsemi is an N-channel enhancement mode field effect transistor manufactured using high cell density, trench MOSFET technology. This design minimizes on-state resistance while providing rugged, reliable and fast switching performance, making it well-suited for low-voltage, low-current applications.

 

The device features a drain-source breakdown voltage of 60V minimum (65.2V typical) and a continuous drain current rating of 115mA at 25°C ambient temperature. Maximum on-resistance is 7.5Ω at VGS=10V and ID=500mA, with a gate threshold voltage of 2.5V maximum. Input capacitance is 50pF maximum, supporting fast switching in small-signal circuits.

 

Rated power dissipation is 200mW at 25°C, with a junction-to-ambient thermal resistance of 380°C/W typical. The device operates over a junction temperature range of -55°C to 150°C. ESD ratings are 50V for the Human Body Model and >2000V for the Charged Device Model, so proper ESD precautions should be observed.

 

The 2N7002L is supplied in a surface-mount SOT-23-3 (TO-236-3, SC-59) package, available in tape and reel packaging with 3000 units per reel. It is Pb-Free and Halogen Free per the datasheet, and is suitable for applications such as small servo motor control, power MOSFET gate drivers, logic level translation, high-speed line drivers, power management, and general switching circuits.

2N7002L Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel Enhancement Mode Field Effect Transistor
Subcategory: N-Channel MOSFET

2N7002L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N7002L Estimated Pricing

Qty Low High
1+ $0.23 $0.23
10+ $0.14 $0.14
100+ $0.10 $0.10
500+ $0.09 $0.09
1,000+ $0.08 $0.08
3,000+ $0.05 $0.05
6,000+ $0.05 $0.05
9,000+ $0.05 $0.05
24,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002L Features

  • N-channel enhancement mode MOSFET.
  • 60V drain-source breakdown voltage.
  • 115mA continuous drain current rating.
  • 7.5Ω maximum on-resistance at 10V.
  • SOT-23-3 surface-mount package.

2N7002L Applications

  • Small servo motor control circuits.
  • Power MOSFET gate driver circuits.
  • Logic level translation applications.
  • High-speed line driver circuits.

2N7002L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the 2N7002L?

The drain-source breakdown voltage is 60V minimum (65.2V typical) at VGS=0V and ID=10μA.

What package is the 2N7002L available in?

SOT-23-3 (also known as TO-236-3 and SC-59) surface-mount package.

What is the operating junction temperature range?

-55°C to 150°C.

What is the maximum gate threshold voltage?

2.5V maximum at ID=250μA.

What is the on-resistance of the 2N7002L?

7.5Ω maximum at VGS=10V and ID=500mA.

What is the maximum continuous drain current?

115mA at TA=25°C.

What are the ESD ratings for the 2N7002L?

Human Body Model 50V, Charged Device Model >2000V.

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