2N7002KW 2N7002KW is an N-Channel enhancement mode MOSFET from On Semiconductor. It features a 60V drain-source voltage, 310mA continuous drain current, and low on-resistance in a compact SC-70 surface mount package.
Mfr Part #:

2N7002KW

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
2N7002KW is an N-Channel enhancement mode MOSFET from On Semiconductor. It features a 60V drain-source voltage, 310mA continuous drain current, and low on-resistance in a compact SC-70 surface mount package.
✓ Total Stock: 73,612 pcs
$ Price Range: $0.11 - $0.42

2N7002KW Available from 3 distributors

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✓ Non-Authorised
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66,901 pcs
66901 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,800 pcs
$0.08 ℹ
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3800 pcs $0.08
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1 On Request On Request On Request On Request On Request
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2,911 pcs
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2N7002KW Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

2N7002KW Description

Short technical summary and product information.

The 2N7002KW is an N-Channel enhancement mode field effect transistor manufactured by On Semiconductor. It is designed for low-power switching and amplification applications requiring a drain-source voltage up to 60V and continuous drain current of 310mA.

 

Key electrical characteristics include a maximum drain-source on-resistance of 1.6 Ohm at VGS = 10V and ID = 500mA, and a gate threshold voltage range of 1.1V to 2.1V. The device offers low input capacitance (50 pF typical) and fast switching speeds with turn-on delay time of 20 ns and turn-off delay time of 60 ns.

 

The MOSFET is housed in an ultra-small SC-70 (SOT-323) surface mount package, making it suitable for space-constrained designs. It supports an operating junction temperature range of -55°C to +150°C and has a maximum power dissipation of 300 mW at 25°C ambient. The device is Pb-Free and RoHS compliant.

2N7002KW Quick Information

Product Type: MOSFET
Canonical Name: 2N7002KW N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel Enhancement Mode

2N7002KW Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N7002KW Estimated Pricing

Qty Low High
1+ $0.42 $0.42
10+ $0.26 $0.26
100+ $0.16 $0.16
500+ $0.12 $0.12
1,000+ $0.11 $0.11
3,000+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002KW Features

  • N-Channel enhancement mode MOSFET design.
  • 60V maximum drain-source voltage rating.
  • 310mA continuous drain current capability.
  • Low on-resistance of 1.6 Ohm at 10V.
  • Compact SC-70 surface mount package.

2N7002KW Applications

  • Low-power DC-DC converter circuits.
  • Signal switching and level shifting.
  • Battery management and protection.
  • Portable and handheld device designs.

2N7002KW FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the 2N7002KW?

The maximum drain-source voltage (Vdss) is 60 V.

What is the continuous drain current rating of the 2N7002KW?

The maximum continuous drain current is 310 mA at TA = 25°C.

What package does the 2N7002KW come in?

The 2N7002KW is available in an SC-70 (SOT-323) surface mount package.

What is the operating temperature range of the 2N7002KW?

The operating junction temperature range is -55°C to +150°C.

Is the 2N7002KW RoHS compliant?

Yes, the 2N7002KW is RoHS3 compliant and Pb-Free as stated in the datasheet.

What is the typical on-resistance of the 2N7002KW?

The maximum drain-source on-resistance is 1.6 Ohm at VGS = 10 V and ID = 500 mA.

What is the gate threshold voltage of the 2N7002KW?

The gate threshold voltage (Vgs(th)) ranges from 1.1 V to 2.1 V at VDS = VGS and ID = 250 µA.

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