2N7002KDW_R1_00001 Dual N-channel enhancement mode MOSFET array rated for 60V and 115mA continuous drain current. Offered in surface-mount SOT-363 package.
Mfr Part #:

2N7002KDW_R1_00001

Available from 1 distributors
Mfr Name: PANJIT
PANJIT
Dual N-channel enhancement mode MOSFET array rated for 60V and 115mA continuous drain current. Offered in surface-mount SOT-363 package.
Total Stock: 27,713 pcs
$ Price Range: $0.03 - $0.19

2N7002KDW_R1_00001 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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27,713 pcs
27713 pcs On Request 1 On Request On Request 14+ On Request On Request

2N7002KDW_R1_00001 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs(th) (Max) @ Id
Weight

2N7002KDW_R1_00001 Description

Short technical summary and product information.

The 2N7002KDW_R1_00001 from PANJIT is a dual N-channel enhancement mode MOSFET array. It utilizes advanced trench process technology for efficient switching in compact designs.

 

Each channel features a maximum drain-source voltage of 60V, a continuous drain current of 115mA at 25°C, and a pulsed drain current rating of 800mA. The on-state resistance is 3Ω maximum at VGS=10V and ID=500mA, and 4Ω at VGS=4.5V and ID=200mA. Gate threshold voltage ranges from 1V to 2.5V.

 

The device is supplied in a SOT-363 surface-mount package, weighing approximately 0.006 grams. It is RoHS3 compliant and halogen-free. Power dissipation is 200mW at 25°C ambient, with a maximum junction-to-ambient thermal resistance of 625°C/W.

 

With built-in ESD protection (2kV HBM) and low leakage current, this MOSFET array is suitable for battery-operated systems, solid-state relay drivers, and general load switching applications.

2N7002KDW_R1_00001 Quick Information

Product Type: MOSFET Array
Canonical Name: 2N7002KDW Dual N-Channel MOSFET Array
Subcategory: Transistors - FETs, MOSFETs - Arrays

2N7002KDW_R1_00001 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

2N7002KDW_R1_00001 Estimated Pricing

Qty Low High
1+ $0.19 $0.19
10+ $0.12 $0.12
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.05 $0.05
3,000+ $0.04 $0.04
6,000+ $0.03 $0.03
9,000+ $0.03 $0.03
24,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002KDW_R1_00001 Features

  • Dual N-channel enhancement mode MOSFET array.
  • Rated for 60V drain-source voltage.
  • Supports 115mA continuous drain current.
  • Available in surface-mount SOT-363 package.
  • ESD protected up to 2kV HBM.

2N7002KDW_R1_00001 Applications

  • Ideal for battery operated systems.
  • Used in solid-state relay drivers.
  • Suitable for level shifting circuits.
  • Common in load switching applications.

2N7002KDW_R1_00001 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the 2N7002KDW_R1_00001?

The maximum drain-source voltage is 60V.

What is the package type for this MOSFET array?

It is offered in a SOT-363 surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the 2N7002KDW_R1_00001 RoHS compliant?

Yes, it is RoHS3 compliant and halogen-free.

What is the continuous drain current rating?

The continuous drain current is 115mA at TA=25°C.

What is the on-state resistance?

The maximum on-state resistance is 3Ω at VGS=10V, ID=500mA, and 4Ω at VGS=4.5V, ID=200mA.

Does this device have ESD protection?

Yes, it is ESD protected up to 2kV (HBM).

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