2N7002K-T1-GE3 N-Channel 60V MOSFET with 300mA continuous drain current and 2Ω on-resistance. Surface mount in SOT-23-3 package.
Mfr Part #:

2N7002K-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
N-Channel 60V MOSFET with 300mA continuous drain current and 2Ω on-resistance. Surface mount in SOT-23-3 package.
✓ Total Stock: 194,920 pcs
$ Price Range: $0.06 - $0.31

2N7002K-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

2N7002K-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

2N7002K-T1-GE3 Description

Short technical summary and product information.

The 2N7002K-T1-GE3 is an N-Channel enhancement-mode MOSFET from Vishay Siliconix, designed for low-voltage switching applications. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 300mA at 25°C. The device offers a low on-resistance of 2Ω at Vgs=10V and a fast switching speed of 25ns, making it suitable for direct logic-level interface with TTL/CMOS circuits.

 

Key electrical characteristics include a gate threshold voltage of 2.5V maximum at 250µA, low input capacitance of 30pF at Vds=25V, and built-in 2000V ESD protection. The MOSFET is housed in a compact SOT-23-3 (TO-236) surface-mount package, ideal for space-constrained designs. It operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 350mW.

 

The part is RoHS3 compliant and halogen-free, as indicated by the GE3 suffix. It is commonly used in relay drivers, solenoid drivers, lamp drivers, and battery-operated systems where low voltage operation and high-speed switching are required.

2N7002K-T1-GE3 Quick Information

Product Type: MOSFET
Series: 2N7002K
Canonical Name: 2N7002K-T1-GE3 N-Channel 60V MOSFET
Subcategory: Single MOSFET

2N7002K-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

2N7002K-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.31 $0.31
10+ $0.19 $0.19
100+ $0.12 $0.12
500+ $0.09 $0.09
1,000+ $0.08 $0.08
3,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002K-T1-GE3 Features

  • N-Channel 60V drain-source voltage MOSFET.
  • Low on-resistance of 2Ω at 10V gate drive.
  • Fast switching speed of 25 nanoseconds.
  • Built-in 2000V ESD protection.
  • RoHS and halogen-free compliant.

2N7002K-T1-GE3 Applications

  • Direct logic-level interface with TTL/CMOS.
  • Drives relays, solenoids, and lamps.
  • Used in battery-operated systems.
  • Suitable for solid state relays.
  • High-speed switching circuits.

2N7002K-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the 2N7002K-T1-GE3?

The maximum drain-source voltage (Vdss) is 60V.

What is the continuous drain current rating?

The continuous drain current is 300mA at 25°C ambient temperature.

What package does the 2N7002K-T1-GE3 come in?

It comes in a SOT-23-3 (TO-236) surface-mount package.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

Is the 2N7002K-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant and also halogen-free.

What is the typical gate charge?

The typical gate charge is 0.4 nC, with a maximum of 0.6 nC at Vgs=4.5V.

Does the device have ESD protection?

Yes, it includes 2000V ESD protection.

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