Mfr Part #:

2N7002ET3G

Available from 2 distributors

Mfr Name: On Semiconductor

N-Channel MOSFET rated for 60V drain-source voltage and 260mA continuous drain current. Surface-mount package SOT-23-3.

✓ Total Stock: 153,040 pcs

2N7002ET3G Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	130,000 pcs On Request	130000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	23,040 pcs On Request	23040 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N7002ET3G Description

Short technical summary and product information.

The 2N7002ET3G is an N-Channel MOSFET from ON Semiconductor, utilizing MOSFET (Metal Oxide) technology. It is designed for low-power switching applications. Key electrical characteristics include a drain-to-source voltage (Vdss) of 60V, continuous drain current (Id) of 260mA at Ta, and a maximum drain-source on-resistance (Rds(on)) of 2.5 Ohms at Id=240mA and Vgs=10V. The gate threshold voltage (Vgs(th)) is 2.5V max at Id=250µA. The device features low gate charge (0.81nC max at Vgs=5V) and low input capacitance (26.7pF max at Vds=25V), making it suitable for high-speed switching. The maximum power dissipation is 300mW. The operating temperature range is -55°C to 150°C. The MOSFET is offered in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59), which is ideal for compact PCB designs. The drive voltage range is 4.5V to 10V for optimal Rds(on). This component is commonly used in load switching, DC-DC converters, and signal switching applications.

2N7002ET3G Quick Information

Product Type: MOSFET

Canonical Name: 2N7002ET3G N-Channel MOSFET

Subcategory: Single MOSFET

2N7002ET3G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N7002ET3G Features

N-Channel MOSFET with 60V drain-source voltage.
Continuous drain current rating of 260mA.
Low on-resistance of 2.5 Ohms max.
Surface-mount SOT-23-3 package.
Operating temperature range -55°C to 150°C.

2N7002ET3G Applications

Used in low-power load switching circuits.
Suitable for DC-DC converter designs.
Ideal for signal level shifting applications.
Common in portable electronic devices.

2N7002ET3G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating temperature range of the 2N7002ET3G?

The operating temperature range is -55°C to 150°C (TJ).

What package is the 2N7002ET3G available in?

It is available in a surface-mount SOT-23-3 package (also TO-236-3, SC-59).

Is the 2N7002ET3G RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified.

What is the maximum drain-source voltage?

60V.

What is the continuous drain current rating?

260mA at Ta.

What is the maximum on-resistance?

2.5 Ohms at Id=240mA, Vgs=10V.

What is the gate threshold voltage?

2.5V max at Id=250µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	260 mA (Ta)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.81 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	26.7 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	300 mW (Tj)
Rds On (Max) @ Id, Vgs	2.5 Ohm @ 240 mA, 10 V
Supplier Device Package	SOT-23-3 (TO-236)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2.5 V @ 250 µA