2N7002ET1G N-Channel MOSFET with 60V drain-source breakdown voltage and 260mA continuous drain current. Features low on-resistance of 2.5 Ohm at 10V and is housed in a surface-mount SOT-23-3 package.
Mfr Part #:

2N7002ET1G

Available from 12 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 60V drain-source breakdown voltage and 260mA continuous drain current. Features low on-resistance of 2.5 Ohm at 10V and is housed in a surface-mount SOT-23-3 package.
✓ Total Stock: 606,874 pcs
$ Price Range: $0.04 - $0.23

2N7002ET1G Available from 12 distributors

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350,000 pcs
350000 pcs On Request 1 On Request On Request On Request On Request On Request
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126,000 pcs
126000 pcs On Request 1 On Request On Request On Request On Request On Request
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84,000 pcs
84000 pcs On Request 1 On Request On Request On Request On Request On Request
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12,014 pcs
12014 pcs On Request 1 On Request On Request 1809+ On Request On Request
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12,000 pcs
12000 pcs On Request 1 On Request On Request On Request On Request On Request
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9,973 pcs
9973 pcs On Request 1 On Request On Request 22+ On Request On Request
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9,000 pcs
$0.08 ℹ
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0+ 0.08
9000 pcs $0.08
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0+ 0.08
1 On Request On Request On Request On Request On Request
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1,802 pcs
1802 pcs On Request 1 On Request On Request On Request On Request On Request
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1,321 pcs
1321 pcs On Request 1 On Request On Request On Request On Request On Request
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538 pcs
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178 pcs
178 pcs On Request 1 On Request On Request On Request On Request On Request
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48 pcs
48 pcs On Request 1 On Request On Request On Request On Request On Request

2N7002ET1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

2N7002ET1G Description

Short technical summary and product information.

The 2N7002ET1G is a single N-Channel MOSFET from On Semiconductor designed for low-power switching applications. It offers a drain-source breakdown voltage of 60 V and a continuous drain current of 260 mA at 25°C ambient temperature. The device features a low on-resistance of 2.5 Ohm maximum at VGS=10V and 3.0 Ohm at VGS=4.5V, enabling efficient operation in low-voltage circuits.

 

Built with Trench technology, this MOSFET provides fast switching performance with a typical gate charge of 0.81 nC and input capacitance of 26.7 pF. The gate threshold voltage ranges from 1.0 V to 2.5 V, making it suitable for logic-level drive. The device is rated for a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 300 mW steady state.

 

Typical applications include low side load switches, level shift circuits, DC-DC converters, and portable electronics such as DSC, PDA, and cell phones. The 2N7002ET1G is housed in a compact SOT-23-3 (TO-236) surface-mount package, ideal for space-constrained designs. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

2N7002ET1G Quick Information

Product Type: MOSFET
Series: 2N7002E
Canonical Name: 2N7002ET1G - N-Channel MOSFET, 60V, 260mA, SOT-23-3
Subcategory: Single N-Channel MOSFET

2N7002ET1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N7002ET1G Estimated Pricing

Qty Low High
1+ $0.23 $0.23
10+ $0.14 $0.14
100+ $0.09 $0.09
500+ $0.06 $0.06
1,000+ $0.06 $0.06
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002ET1G Features

  • 60V drain-source breakdown voltage.
  • 260mA continuous drain current.
  • Low on-resistance of 2.5 Ohm.
  • Surface-mount SOT-23-3 package.
  • RoHS and Pb-Free compliant.

2N7002ET1G Applications

  • Ideal for low side load switching.
  • Used in level shift circuits.
  • Suitable for DC-DC converter applications.
  • Designed for portable electronics.

2N7002ET1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the 2N7002ET1G?

60 V minimum at VGS=0V, ID=250µA.

What is the package type of the 2N7002ET1G?

SOT-23-3 (TO-236).

What is the operating junction temperature range?

-55°C to +150°C.

Is the 2N7002ET1G RoHS compliant?

Yes, it is RoHS compliant, Pb-Free, and Halogen Free.

What is the gate threshold voltage of the 2N7002ET1G?

1.0 V to 2.5 V at VGS=VDS, ID=250µA.

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