| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,205,000 pcs
|
1205000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2N7002E-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Dale, designed for low-current switching applications. It features a maximum drain-to-source voltage of 60V and continuous drain current of 240mA.
Key electrical characteristics include a maximum on-resistance of 3 Ohm at 250mA with 10V gate drive, a low gate charge of 0.6 nC, and input capacitance of 21 pF. The gate threshold voltage is 2.5V maximum at 250µA, and the device supports gate-source voltages up to ±20V.
The MOSFET is housed in a surface-mount TO-236-3 (SOT-23-3) package, with an operating temperature range of -55°C to +150°C. Maximum power dissipation is 350mW.
This component is suitable for general-purpose switching, signal level shifting, and low-power load control in compact circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
| 10+ | $0.51 | $0.51 |
| 100+ | $0.33 | $0.33 |
| 500+ | $0.20 | $0.20 |
| 1,000+ | $0.16 | $0.16 |
| 3,000+ | $0.13 | $0.13 |
| 6,000+ | $0.11 | $0.11 |
| 9,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60V.
It is available in a TO-236 (SOT-23-3) surface mount package.
The operating temperature range is -55°C to 150°C.
It is listed as RoHS3 Compliant, but this is unverified.
Maximum Rds(on) is 3 Ohm at 250mA and 10V.
Maximum gate charge is 0.6 nC at 4.5V.
Maximum input capacitance is 21 pF at 5V.