| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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161 pcs
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161 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N7002E from Anbon Semiconductor is an N-Channel enhancement mode MOSFET designed for low-power switching and logic level applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 340mA at 25°C ambient. The device has a low maximum on-resistance of 5 Ohm at 300mA and 10V gate drive, enabling efficient switching in battery-powered and portable devices.
With a gate threshold voltage of 2.5V maximum at 250µA drain current, the MOSFET can be driven by logic-level signals. The input capacitance is 18 pF at 30V drain-source bias, and the gate charge is only 2.4 nC at 10V, allowing fast switching transitions. The device is specified for operating junction temperatures up to 150°C and dissipates up to 350mW at ambient temperature.
The 2N7002E is supplied in the industry-standard SOT-23 surface mount package, also known as TO-236-3 or SC-59, making it suitable for automated assembly processes. The part includes built-in ESD protection as indicated by its product description. This MOSFET is RoHS3 compliant and has an MSL of 1, meaning it has no moisture sensitivity limitations for storage and soldering.
The maximum drain to source voltage (Vdss) is 60V.
The maximum drain current is 340mA at ambient temperature (Ta).
The 2N7002E is available in a surface mount SOT-23 package (also specified as TO-236-3 and SC-59).
The maximum operating junction temperature is 150°C (TJ).
According to the existing database, the part is indicated as RoHS3 Compliant, but this status is unverified.