2N7002DWQ-7-F This is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a drain-source voltage of 60V, continuous drain current of 230mA, and low on-resistance of 7.5 Ohm.
Mfr Part #:

2N7002DWQ-7-F

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
This is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a drain-source voltage of 60V, continuous drain current of 230mA, and low on-resistance of 7.5 Ohm.
✓ Total Stock: 373,020 pcs
$ Price Range: $0.13 - $0.60

2N7002DWQ-7-F Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
373,020 pcs
373020 pcs On Request 1 On Request On Request On Request On Request On Request

2N7002DWQ-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

2N7002DWQ-7-F Description

Short technical summary and product information.

The 2N7002DWQ-7-F is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for low-power switching and power management applications. Key electrical characteristics include a drain-source voltage of 60V, continuous drain current of 230mA, and a maximum on-resistance of 7.5Ω at Vgs=5V. The device also features a low gate threshold voltage of 2V and low input capacitance of 50pF, enabling fast switching and efficient operation.

 

The MOSFET is housed in a compact SOT-363 surface mount package, making it suitable for space-constrained designs. It is fully RoHS3 compliant, halogen-free, and lead-free, meeting environmental standards. The part is qualified to JEDEC standards for high reliability, although for specific automotive requirements the separate Q-suffix datasheet should be consulted.

 

Typical applications include motor control, power management, and load switching. The low on-resistance and fast switching capability make it a good choice for high-efficiency power conversion circuits in portable and embedded systems.

2N7002DWQ-7-F Quick Information

Product Type: MOSFET Array
Series: 2N7002DW
Canonical Name: 2N7002DWQ-7-F Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel MOSFET

2N7002DWQ-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

2N7002DWQ-7-F Estimated Pricing

Qty Low High
1+ $0.60 $0.60
10+ $0.41 $0.41
100+ $0.26 $0.26
500+ $0.16 $0.16
1,000+ $0.14 $0.14
3,000+ $0.13 $0.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002DWQ-7-F Features

  • Dual N-channel MOSFET configuration.
  • 60V drain-to-source voltage rating.
  • 230mA continuous drain current.
  • Low on-resistance of 7.5 Ohm.
  • Compact SOT-363 surface mount package.

2N7002DWQ-7-F Applications

  • Motor control applications.
  • Power management functions.
  • Load switching circuits.
  • High-efficiency power conversion.

2N7002DWQ-7-F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of this MOSFET?

60 V.

What package does this MOSFET come in?

SOT-363.

What is the operating temperature range?

-55°C to 150°C.

Is this component RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous drain current rating?

230 mA.

What is the on-resistance of this MOSFET?

7.5 Ohm maximum at Vgs=5V and Id=50mA.

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