Mfr Part #:

2N7002DWQ-13-F

Dual N-channel enhancement mode MOSFET from Diodes Incorporated. Features 60V drain-source voltage, 230mA continuous drain current, and low on-resistance of 7.5 Ohm.

✓ Total Stock: 111,020 pcs

$ Price Range: $0.22 - $0.78

2N7002DWQ-13-F Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	111,020 pcs On Request	111020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N7002DWQ-13-F Description

Short technical summary and product information.

The 2N7002DWQ-13-F is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It is qualified to AEC-Q101 and supports PPAP requirements. This MOSFET delivers a maximum drain-source voltage of 60V and a continuous drain current of 230mA at 25°C. The on-resistance is typically 7.5 Ohm at Vgs=5V and Id=50mA, ensuring low conduction losses. The gate threshold voltage is 2V maximum at Id=250µA, allowing easy drive from low-voltage logic. Input capacitance is 50pF at Vds=25V, contributing to fast switching performance. Power dissipation is 310mW at 25°C ambient. The device is housed in a compact SOT-363 surface mount package, with a matte tin finish and tape & reel packaging (10,000 units per reel). It is fully RoHS3 compliant, lead-free, and halogen- and antimony-free (green device). The operating junction temperature range is -55°C to 150°C. Typical applications include motor control, power management, and other automotive electronic systems.

2N7002DWQ-13-F Quick Information

Product Type: Dual N-Channel Enhancement Mode MOSFET

Series: 2N7002

Canonical Name: 2N7002DWQ-13-F Dual N-Channel Enhancement Mode MOSFET

Subcategory: Dual N-Channel MOSFET

2N7002DWQ-13-F Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead-Free

2N7002DWQ-13-F Estimated Pricing

Qty	Low	High
1+	$0.78	$0.78
10+	$0.52	$0.52
100+	$0.33	$0.33
500+	$0.22	$0.22
10,000+	$0.22	$0.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002DWQ-13-F Features

Dual N-channel enhancement mode MOSFET.
60V drain-source voltage rating.
230mA continuous drain current.
Low on-resistance of 7.5 Ohm.
Surface mount SOT-363 package.

2N7002DWQ-13-F Applications

Motor control applications.
Power management functions.
Automotive electronics.
Fast switching circuits.

2N7002DWQ-13-F FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

60V

What is the package type?

SOT-363 (6-TSSOP, SC-88)

What is the operating temperature range?

-55°C to 150°C (junction)

Is this component RoHS compliant?

Yes, fully RoHS3 compliant.

What is the continuous drain current?

230mA at 25°C ambient

What is the on-resistance?

7.5 Ohm maximum at Vgs=5V, Id=50mA

What is the gate threshold voltage?

2V maximum at Id=250µA

Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer Name	Diodes Incorporated
AEC Qualified	Yes
Automotive Grade	Yes
Configuration	2 N-Channel (Dual)
Current	230 mA
Drain to Source Voltage (Vdss)	60 V
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power	310 mW
Rds On (Max) @ Id, Vgs	7.5 Ohm
SVHC Present	Not Present
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	SOT-363
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Termination Finish	Matte Tin
Vgs(th) (Max) @ Id	2 V