| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The 2N7002DW-G is a dual N-channel enhancement mode MOSFET from On Semiconductor, designed for low-power switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 115mA at 25°C, with a maximum on-resistance of 2 Ohms at 500mA and 10V gate drive.
This device offers low gate threshold voltage (1V minimum, 2V maximum) and low input capacitance of 50pF, enabling fast switching with minimal drive requirements. The dual configuration integrates two independent MOSFETs in a single compact package, saving board space.
Packaged in a surface-mount SC-88/SC70-6/SOT-363 package, the 2N7002DW-G is suitable for automated assembly. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, meeting environmental standards for modern electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.66 | $0.66 |
| 10+ | $0.41 | $0.41 |
| 50+ | $0.29 | $0.29 |
| 100+ | $0.26 | $0.26 |
| 500+ | $0.20 | $0.20 |
| 1,000+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 115mA at 25°C and 73mA at 100°C.
The operating temperature range is -55°C to 150°C (junction temperature).
It comes in a surface mount SC-88/SC70-6/SOT-363 package.
Yes, the datasheet states it is Pb-Free, Halogen Free/BFR Free and RoHS Compliant.
The maximum on-resistance is 2 Ohms at Vgs=10V and Id=500mA.
The gate threshold voltage ranges from 1V minimum to 2V maximum at Id=250µA.