| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia 2N7002BKW,115 is a single N-Channel MOSFET designed for various electronic applications. It offers a drain-source breakdown voltage of 60V and a continuous drain current of 300mA.
Key electrical characteristics include a typical drain-source on-resistance (Rds On) of 1.6 Ohms and a gate-source threshold voltage (Vgs th) of 1.1V. The device also exhibits typical switching times, with a turn-on delay of 5ns, fall time of 7ns, turn-off delay of 12ns, and rise time of 6ns. The maximum gate-source voltage is rated at 10V.
This MOSFET operates within a temperature range of -55C to +150C and has a power dissipation of 330mW. It is housed in a SOT-323-3 surface-mount package, suitable for automated assembly processes. The technology used is Silicon (Si) with an enhancement channel mode.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The continuous drain current is 300mA.
The typical drain-source on-resistance is 1.6 Ohms.
The gate-source threshold voltage is 1.1V.
The MOSFET is in a SOT-323-3 package.
The operating temperature range is -55C to +150C.