2N7002AQ-7 2N7002AQ-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 60V drain-source voltage, 180mA continuous drain current, and low on-resistance of 5 Ohm.
Mfr Part #:

2N7002AQ-7

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
2N7002AQ-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 60V drain-source voltage, 180mA continuous drain current, and low on-resistance of 5 Ohm.
✓ Total Stock: 31,260 pcs
$ Price Range: $0.06 - $0.36

2N7002AQ-7 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

2N7002AQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

2N7002AQ-7 Description

Short technical summary and product information.

The 2N7002AQ-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated designed to meet automotive requirements. It is AEC-Q101 qualified and PPAP capable, suitable for motor control and power management applications.

 

Key electrical characteristics include a maximum drain-source voltage of 60V, continuous drain current of 180mA at 25°C, and low on-resistance of 5 Ohm (max) at Vgs=10V and 115mA. The gate threshold voltage is 2V (max) at Id=250µA, and input capacitance is 23 pF (max) at Vds=25V. The device features ESD protection up to 1.2 kV (HBM).

 

The MOSFET is housed in a SOT-23-3 surface mount package with matte tin annealed over Alloy 42 leadframe. It operates over a junction temperature range of -55°C to 150°C and supports a maximum power dissipation of 370 mW. Standard packaging is 3,000 units per tape and reel.

2N7002AQ-7 Quick Information

Product Type: N-Channel MOSFET
Series: 2N7002
Canonical Name: 2N7002AQ-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single N-Channel Enhancement Mode MOSFET

2N7002AQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

2N7002AQ-7 Estimated Pricing

Qty Low High
1+ $0.36 $0.36
10+ $0.18 $0.18
100+ $0.13 $0.13
500+ $0.12 $0.12
3,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002AQ-7 Features

  • N-Channel enhancement mode MOSFET.
  • 60V drain-source voltage rating.
  • 180mA continuous drain current.
  • Low on-resistance of 5 Ohm typical.
  • ESD protected gate up to 1.2kV.

2N7002AQ-7 Applications

  • Suitable for motor control circuits.
  • Used in power management functions.
  • Ideal for automotive electronics.

2N7002AQ-7 FAQs

8 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the 2N7002AQ-7?

The maximum drain-source voltage (Vdss) is 60 V.

What package type is the 2N7002AQ-7 available in?

It comes in a SOT-23-3 surface mount package.

What is the operating temperature range of the 2N7002AQ-7?

The operating junction temperature range is -55°C to 150°C.

Is the 2N7002AQ-7 RoHS compliant?

Yes, it is fully RoHS compliant and lead-free.

What is the on-resistance of the 2N7002AQ-7?

The maximum on-resistance is 5 Ohm at Vgs=10V and 115mA, and 6 Ohm at Vgs=5V.

What is the gate threshold voltage of the 2N7002AQ-7?

The maximum gate threshold voltage (Vgs(th)) is 2V at Id=250µA.

Does the 2N7002AQ-7 have ESD protection?

Yes, the gate is ESD protected up to 1.2 kV (Human Body Model).

Is the 2N7002AQ-7 qualified for automotive applications?

Yes, it is AEC-Q101 qualified and PPAP capable.

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