| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,280 pcs
|
1280 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The 2N7002-G is an N-Channel enhancement-mode MOSFET designed for low-power switching and amplification. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 250mA at ambient temperature. The device offers a typical on-resistance of 3 ohms at 10V gate drive, with a low gate charge of 1nC for efficient switching. The MOSFET is housed in a surface-mount SOT-23 package, suitable for compact designs. Operating temperature range is -55°C to 150°C.
60V.
SOT-23-3 (TO-236-3, SC-59).
-55°C to 150°C.
RoHS3 compliant (unverified).
250mA at ambient temperature.
1V to 2.5V at 250µA drain current.
3 ohms maximum at 250mA and 10V gate drive.