| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
183 pcs
|
183 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Vgs(th) (Max) @ Id |
The NXP Semiconductors 2N7002,235 is an N-Channel MOSFET designed for various applications. It features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 300mA at 25°C.
The MOSFET has a maximum on-resistance (Rds On) of 5 Ohms at 500mA and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA, and the maximum gate-to-source voltage is ±30V. Input capacitance (Ciss) is rated at a maximum of 50pF at 10V.
With a maximum power dissipation of 830mW (Tc), this MOSFET operates within a temperature range of -65°C to 150°C (TJ). It is housed in a TO-236AB package, suitable for surface mounting.
The series is noted as Automotive, AEC-Q101, and TrenchMOS™, indicating its suitability for automotive environments and advanced MOSFET technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
TO-236AB (SOT-23) surface-mount package.
-65°C to 150°C.
300 mA at 25°C.
5 Ohm at 500 mA and 10 V gate drive.
830 mW.
Surface mount.