| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
114,588 pcs
|
114588 pcs | On Request | 1 | On Request | On Request | 1520+ | On Request | On Request | |
|
4,914 pcs
|
4914 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,137 pcs
|
2137 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,883 pcs
|
1883 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
515 pcs
|
515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-21 02:15:56 | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N7002 from NXP Semiconductors is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. This surface-mounted device is designed for logic level gate drive sources and offers very fast switching capabilities.
Key electrical specifications include a maximum drain-source voltage of 60V and a continuous drain current of 300mA at 25°C solder point temperature. The drain-source on-state resistance is typically 2.85 Ohms at a gate-source voltage of 10V and a drain current of 500mA.
This MOSFET is housed in a compact SOT23 plastic package, making it suitable for space-constrained applications. Its features make it ideal for logic level translators and high-speed line drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the 2N7002 is 60V.
The continuous drain current for the 2N7002 is 300mA at 25°C solder point temperature.
The typical drain-source on-state resistance is 2.85 Ohms when VGS is 10V and ID is 500mA.
The 2N7002 is available in the SOT23 surface-mount package.
The 2N7002 is suitable for logic level translators and high-speed line drivers.
