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2N7000TA N-Channel MOSFET with 60V drain-source voltage and 200mA continuous drain current in a TO-92-3 through-hole package. Ideal for low-power switching applications.
Mfr Part #:

2N7000TA

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 60V drain-source voltage and 200mA continuous drain current in a TO-92-3 through-hole package. Ideal for low-power switching applications.
✓ Total Stock: 203,631 pcs
$ Price Range: $0.17 - $0.57

2N7000TA Available from 5 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N7000TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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2N7000TA Description

Short technical summary and product information.

The 2N7000TA is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 60V and a continuous drain current of 200mA (Tc). The device offers an on-resistance of 5 Ohms maximum at Vgs = 10V and Id = 500mA, with a gate threshold voltage of 3V maximum at Id = 1mA.

 

Designed for low-power switching and amplification, this MOSFET operates over a junction temperature range of -55°C to 150°C. The maximum power dissipation is 400mW at ambient temperature. The input capacitance is 50pF at Vds = 25V, suitable for high-impedance circuits.

 

The device is housed in a TO-226-3 / TO-92-3 (TO-226AA) through-hole package (supplier package TO-92-3) with formed leads, making it compatible with standard PCB layouts. The mounting type is through hole, ideal for breadboard prototyping and low-density designs.

 

The 2N7000TA is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited). This MOSFET is suitable for general-purpose switching, relay drivers, and logic-level conversion applications where moderate voltage and current are required.

2N7000TA Quick Information

Product Type: MOSFET
Canonical Name: 2N7000TA N-Channel MOSFET
Subcategory: MOSFET

2N7000TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N7000TA Estimated Pricing

Qty Low High
1+ $0.57 $0.57
10+ $0.35 $0.35
100+ $0.22 $0.22
500+ $0.17 $0.17
2,000+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7000TA Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • 200mA continuous drain current rating.
  • 5 Ohm maximum on-resistance at 10V gate drive.
  • Through-hole TO-92-3 package.
  • RoHS3 compliant and REACH unaffected.

2N7000TA Applications

  • Used in low-power DC switching circuits.
  • Ideal for relay driver and solenoid control.
  • Applicable in logic-level conversion.
  • Suitable for general-purpose signal switching.

2N7000TA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the 2N7000TA?

60V.

What is the continuous drain current of the 2N7000TA?

200mA (Tc).

What is the on-resistance of the 2N7000TA?

5 Ohms maximum at Vgs = 10V and Id = 500mA.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What package does the 2N7000TA come in?

TO-226-3 / TO-92-3 (TO-226AA) formed leads, through-hole mounting.

Is the 2N7000TA RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the gate threshold voltage?

3V maximum at Id = 1mA.

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