| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2N7000G is an N-Channel enhancement mode MOSFET from On Semiconductor designed for low-power switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 200mA, making it suitable for small signal switching and logic level conversion.
The device offers a maximum on-resistance of 5 Ohm at a gate drive of 10V and 500mA drain current, with a gate threshold voltage of 3V at 1mA. Input capacitance is 60pF at 25V drain-source voltage, enabling fast switching in low-frequency circuits.
The MOSFET is housed in a through-hole TO-92 package (TO-226-3, TO-92-3 Long Body) with a maximum power dissipation of 350mW at case temperature. It operates over a junction temperature range of -55°C to 150°C.
Typical applications include load switching, relay drivers, and DC-DC converter circuits where low current and voltage requirements are present. The part is RoHS3 compliant (unverified) and has an MSL of Level 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-226-3, TO-92-3 Long Body (through-hole).
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
5 Ohm maximum at 500mA drain current and 10V gate drive.
3V maximum at 1mA drain current.
200mA at ambient temperature.