| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2N7000-D26Z is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 200 mA at an ambient temperature of 25°C. The device has a maximum on-resistance (Rds(on)) of 5 Ohms at a gate drive of 10 V and 500 mA drain current.
This MOSFET uses standard Metal Oxide (MOSFET) technology and is designed for low-power switching applications. The gate threshold voltage (Vgs(th)) is a maximum of 3 V at 1 mA drain current, and the maximum gate-source voltage is ±20 V. The input capacitance (Ciss) is 50 pF at a drain-source voltage of 25 V.
The device is offered in a through-hole TO-92-3 package (TO-226AA), making it suitable for manual assembly and prototyping. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 400 mW at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.63 | $0.63 |
| 10+ | $0.39 | $0.39 |
| 100+ | $0.25 | $0.25 |
| 500+ | $0.19 | $0.19 |
| 2,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60 V.
The maximum continuous drain current (Id) is 200 mA at ambient temperature (Ta).
The device is available in a through-hole TO-92-3 package (TO-226AA).
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance (Rds(on)) is 5 Ohms at a gate-source voltage of 10 V and a drain current of 500 mA.
The maximum gate threshold voltage (Vgs(th)) is 3 V at a drain current of 1 mA.
The maximum power dissipation is 400 mW at ambient temperature (Ta).