SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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8 pcs
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8 pcs | On Request | 8 | On Request | On Request | On Request | On Request | On Request |
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The 2N7000 is an N-channel enhancement mode field-effect transistor (MOSFET) manufactured by Siliconix. This component operates as a voltage-controlled variable resistor, where the resistance between the drain and source changes based on the applied gate-to-source voltage (Vgs).
Key electrical characteristics include a maximum drain-source voltage (Vds) of 60V and a maximum gate-source voltage (Vgs) of 18V. The on-resistance (Rds(on)) is typically 2Ω when the gate-to-source voltage is 10V, and it exhibits a typical resistance of 4.5V at the minimum threshold voltage. This makes it suitable for applications requiring voltage-controlled switching or amplification.
The 2N7000 is supplied in a TO-92 package, which is a common through-hole mounting package. Proper operation within the absolute maximum limits is crucial to prevent device failure due to overheating or permanent damage. The pinout typically consists of the source on the left, gate in the middle, and drain on the right when viewed with the flat side up.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the 2N7000 is 60V.
The maximum gate-source voltage (Vgs) for the 2N7000 is 18V.
The 2N7000 offers a typical on-resistance of 2Ω when the gate-to-source voltage is 10V.
The 2N7000 is available in a TO-92 package.
