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2N7000 N-Channel enhancement mode MOSFET with 60V drain-source voltage and 350mA continuous drain current in a TO-92-3 through-hole package.
Mfr Part #:

2N7000

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
N-Channel enhancement mode MOSFET with 60V drain-source voltage and 350mA continuous drain current in a TO-92-3 through-hole package.
✓ Total Stock: 36 pcs

2N7000 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
Non-Authorised Inventory information
36 pcs
On Request
36 pcs On Request 1 On Request On Request NO DC On Request On Request
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2N7000 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Conflict Minerals
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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2N7000 Description

Short technical summary and product information.

The 2N7000 is an N-Channel enhancement mode MOSFET designed for general-purpose switching and signal processing applications. It features a drain-source voltage rating of 60V and a continuous drain current of 350mA when measured at case temperature (Tc), with a peak drain current capability of 500mA. The device offers a low on-resistance of 5Ω maximum at VGS=10V and 6Ω at VGS=4.5V, enabling efficient logic-level operation.

 

The gate threshold voltage ranges from 0.8V to 3V, making it suitable for low-voltage drive circuits. With an input capacitance of 43pF and a gate charge of 2nC, the 2N7000 provides fast switching performance. Power dissipation is rated at 1W at case temperature and 350mW when leads are kept at ambient temperature. The operating junction temperature range is -55°C to 150°C.

 

The device is housed in a TO-226-3 / TO-92-3 through-hole package, suitable for manual and automated assembly. It is compliant with RoHS3, REACH, and conflict minerals regulations. Typical applications include signal processing, logic level conversion, and driver stages.

2N7000 Quick Information

Product Type: MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Canonical Name: 2N7000 N-Channel MOSFET, 60V, 350mA, TO-92-3
Subcategory: N-Channel MOSFET

2N7000 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N7000 Features

  • N-Channel enhancement mode MOSFET design.
  • 60V drain-source voltage rating.
  • 350mA continuous drain current capability.
  • Low on-resistance of 5Ω at 10V drive.
  • Through-hole TO-92-3 package for easy mounting.

2N7000 Applications

  • Ideal for signal processing circuits.
  • Used in logic level conversion.
  • Suitable for driver stage applications.
  • Common in low-power switching designs.

2N7000 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the 2N7000?

60V.

What package is the 2N7000 available in?

TO-226-3, TO-92-3 (TO-226AA) through-hole package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the 2N7000 RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous drain current rating?

350mA at case temperature (Tc), 200mA at ambient temperature.

What is the gate threshold voltage?

0.8V to 3V (VGS=VDS, ID=1mA).

What is the maximum power dissipation?

1W at case temperature (Tc), 350mW with leads kept at ambient.

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