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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
55,882 pcs
|
55882 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,520 pcs
|
9520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,400 pcs
|
8400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
575 pcs
|
575 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
138 pcs
|
138 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
128 pcs
|
128 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
35 pcs
|
35 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Current | |
| Drain Current (Maximum @ Pulse) | |
| Drain Current (Maximum @ Tc=25 °C) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source On-Resistance (Maximum @ Vgs=4.5 V, Id=75 mA) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (Minimum/Typical/Maximum @ Vgs=Vds, Id=1 mA) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2N7000 is an N-channel enhancement mode MOSFET from On Semiconductor designed for low-power switching and signal processing applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 200mA (500mA peak). The device offers a maximum on-resistance of 5Ω at Vgs=10V and 6Ω at Vgs=4.5V, enabling efficient operation at logic-level gate voltages. With a low gate charge of 2nC and input capacitance of 43pF, the 2N7000 supports fast switching transitions. The gate threshold voltage ranges from 0.8V to 3V, making it suitable for logic level conversion. The device can dissipate up to 350mW and operates at a junction temperature up to 150°C, with a storage range of -55°C to +150°C. The 2N7000 is housed in a through-hole TO-92-3 package (TO-226-3). It is RoHS3 compliant, REACH unaffected, and free from conflict minerals as per the datasheet. Typical applications include signal processing, logic level converters, and driver circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.65 | $0.65 |
| 10+ | $0.40 | $0.40 |
| 100+ | $0.26 | $0.26 |
| 500+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N7000 has a maximum drain-source voltage (Vdss) of 60V.
The 2N7000 is available in a TO-92-3 (TO-226-3) through-hole package.
The junction temperature maximum is 150°C, and the storage temperature range is -55°C to +150°C.
Yes, the 2N7000 is RoHS3 compliant and REACH unaffected as per the datasheet.
The gate threshold voltage (Vgs(th)) is typically 0.8V to 3V at Id=1mA.
The maximum drain-source on-resistance is 5Ω at Vgs=10V, Id=500mA, and 6Ω at Vgs=4.5V, Id=75mA.
The continuous drain current is 200mA, with a peak pulse current of 500mA.