2N7000 2N7000 is an N-Channel enhancement mode MOSFET from Diotec Semiconductor. It features a 60V drain-source voltage, 200mA continuous drain current, and 5Ω maximum on-resistance at 10V gate drive.
Mfr Part #:

2N7000

Available from 1 distributors
Mfr Name: Diotec Semiconductor
Diotec Semiconductor
2N7000 is an N-Channel enhancement mode MOSFET from Diotec Semiconductor. It features a 60V drain-source voltage, 200mA continuous drain current, and 5Ω maximum on-resistance at 10V gate drive.
✓ Total Stock: 417 pcs
$ Price Range: $0.05 - $0.29

2N7000 Available from 1 distributor

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✓ Non-Authorised
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2N7000 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Conflict Minerals
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

2N7000 Description

Short technical summary and product information.

The 2N7000 is an N-Channel enhancement mode MOSFET designed for low-power switching and signal processing applications. Manufactured by Diotec Semiconductor, this device offers a maximum drain-source voltage of 60V and a continuous drain current of 200mA at ambient temperature. The peak drain current is rated at 500mA.

 

Key electrical characteristics include a drain-source on-state resistance of 5Ω maximum at Vgs=10V and Id=500mA, and 6Ω maximum at Vgs=4.5V and Id=75mA. The gate-source threshold voltage ranges from 0.8V to 3V at Id=1mA. The device supports a maximum gate-source voltage of ±20V DC and ±40V pulsed (t<50µs).

 

The 2N7000 is housed in a TO-92 through-hole package, suitable for commercial grade applications. It is compliant with RoHS, REACH, and Conflict Minerals regulations. Typical applications include signal processing, logic level conversion, and driver stages.

2N7000 Quick Information

Product Type: MOSFET
Series: 2N7000
Canonical Name: 2N7000 N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

2N7000 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant
Lead Free: No

2N7000 Estimated Pricing

Qty Low High
1+ $0.29 $0.29
10+ $0.18 $0.18
50+ $0.13 $0.13
100+ $0.11 $0.11
500+ $0.08 $0.08
4,000+ $0.06 $0.06
12,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7000 Features

  • N-Channel enhancement mode MOSFET.
  • 60V maximum drain-source voltage.
  • 200mA continuous drain current.
  • 5Ω on-resistance at 10V gate drive.
  • TO-92 through-hole package.

2N7000 Applications

  • Signal processing and switching circuits.
  • Logic level converter applications.
  • Driver stages in low-power designs.

2N7000 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the 2N7000?

The maximum drain-source voltage is 60V.

What is the continuous drain current rating?

The continuous drain current is 200mA at ambient temperature.

What is the on-resistance of the 2N7000?

The maximum on-resistance is 5Ω at Vgs=10V and Id=500mA, and 6Ω at Vgs=4.5V and Id=75mA.

What is the gate threshold voltage range?

The gate threshold voltage ranges from 0.8V to 3V at Id=1mA.

What package is the 2N7000 available in?

The 2N7000 is available in a TO-92 through-hole package.

Is the 2N7000 RoHS compliant?

Yes, the 2N7000 is compliant to RoHS (without exemptions).

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