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2N7000 N-Channel enhancement mode MOSFET with 60V drain-source breakdown voltage and 200mA continuous drain current. Housed in a TO-92 through-hole package.
Mfr Part #:

2N7000

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
N-Channel enhancement mode MOSFET with 60V drain-source breakdown voltage and 200mA continuous drain current. Housed in a TO-92 through-hole package.
✓ Total Stock: 50,000 pcs

2N7000 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
50,000 pcs
On Request
50000 pcs On Request 1 On Request On Request On Request On Request On Request
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2N7000 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Conflict Minerals
Current
Drain to Source Voltage (Vdss)
FET Type
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
Weight
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2N7000 Description

Short technical summary and product information.

The 2N7000 is an N-Channel enhancement mode MOSFET designed for low-power switching and signal processing applications. It features a maximum drain-source voltage of 60V and continuous drain current of 200mA, with a peak current capability of 500mA.

 

Key electrical characteristics include a maximum on-resistance of 5Ω at 500mA and 10V gate drive, and 6Ω at 75mA and 4.5V. The gate threshold voltage ranges from 0.8V to 3V at 1mA drain current. Input capacitance is 60pF at 25V drain-source voltage, enabling fast switching.

 

The device is housed in a TO-92 through-hole package with formed leads, suitable for manual and automated assembly. It is RoHS, REACH, and Conflict Minerals compliant. The junction temperature range is up to 150°C, with storage from -55°C to +150°C.

2N7000 Quick Information

Product Type: N-Channel MOSFET
Series: 2N7000
Canonical Name: 2N7000 N-Channel MOSFET
Subcategory: N-Channel MOSFET

2N7000 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant
Lead Free: No

2N7000 Features

  • N-Channel enhancement mode MOSFET design.
  • 60V drain-source voltage rating.
  • 200mA continuous drain current.
  • Low on-resistance of 5Ω at 10V.
  • Through-hole TO-92 package.

2N7000 Applications

  • Signal processing and switching circuits.
  • Logic level converter applications.
  • Driver stages for low-power loads.

2N7000 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V maximum.

What is the continuous drain current?

200mA (at Ta).

What is the on-resistance?

5Ω max at 500mA/10V, 6Ω max at 75mA/4.5V.

What is the gate threshold voltage?

0.8V min to 3V max at 1mA drain current.

What is the operating junction temperature?

150°C maximum.

What package is it available in?

TO-92 through-hole package (TO-226-3, TO-92-3).

Is it RoHS compliant?

Yes, RoHS compliant.

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