| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The 2N6990 is a quad NPN bipolar junction transistor array manufactured by Microchip Technology. It integrates four NPN transistors in a single 14-Flatpack surface-mount package, providing a compact solution for designs requiring multiple matched switching or amplification stages.
The device features a collector-emitter breakdown voltage of 50V and a collector current rating of 0.8A, with a maximum power dissipation of 400mW. The DC current gain (hFE) is a minimum of 100 at a test condition of 150mA collector current and 10V collector-emitter voltage. The maximum collector-emitter saturation voltage is 1V at a base current of 50mA and collector current of 500mA. The collector cutoff current (ICBO) is specified at 10µA.
The operating temperature range spans from -65°C to 200°C (junction temperature), making it suitable for demanding thermal environments. The surface-mount 14-Flatpack package enables automated assembly and space-efficient PCB layouts.
This quad transistor array is appropriate for applications requiring multiple NPN transistors in a single package, such as driver circuits, switching applications, and signal processing stages where space and component count are considerations.
| Qty | Low | High |
|---|---|---|
| 100+ | $43.26 | $43.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N6990 contains four NPN transistors (quad NPN configuration).
The collector-emitter breakdown voltage (VCEO) is 50V.
The maximum collector current (Ic) is 0.8A.
The power dissipation is 400mW.
The operating temperature range is -65°C to 200°C (junction temperature).
The 2N6990 is available in a 14-Flatpack surface-mount package.
The minimum DC current gain (hFE) is 100, measured at Ic=150mA and Vce=10V.