2N697 The 2N697 is a NPN medium power silicon switching transistor qualified per MIL-PRF-19500/99. It features a collector-emitter breakdown voltage of 40V, collector current of 500mA, and DC current gain of 40-120.
Mfr Part #:

2N697

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N697 is a NPN medium power silicon switching transistor qualified per MIL-PRF-19500/99. It features a collector-emitter breakdown voltage of 40V, collector current of 500mA, and DC current gain of 40-120.
Total Stock: 7 pcs
$ Price Range: $15.70 - $16.91

2N697 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7 pcs
7 pcs On Request 1 On Request On Request On Request On Request 2026-04-29 04:15:11

2N697 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Collector Current
Collector-Base Cutoff Current
Collector-Base Voltage
DC Current Gain (Minimum/Maximum @ I_C = 150 mA, V_CE = 10 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Cutoff Current
Emitter-Base Voltage
Frequency
Magnitude of Common Emitter Small-Signal Short-Circuit Forward-Current Transfer Ratio
Military Grade
Mounting Type
Operating & Storage Junction Temperature Range
Operating and Storage Junction Temperature Range
Output Capacitance
Storage Temperature
Supplier Device Package
Thermal Resistance - Junction to Case
Total Power Dissipation @ T_A = 25°C
Total Power Dissipation @ T_C = 25°C
Transistor Type
Turn Off Time
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage

2N697 Description

Short technical summary and product information.

The 2N697 is a NPN medium power silicon switching transistor designed for general-purpose switching and amplifier applications. It is qualified per MIL-PRF-19500/99, ensuring reliability for military and aerospace use.

 

Key electrical specifications include a collector-emitter breakdown voltage of 40V (minimum), collector-base voltage of 60V, and emitter-base voltage of 5V. The device can handle a continuous collector current of 500mA and dissipates up to 0.6W at 25°C ambient temperature (2.0W at case temperature). DC current gain (hFE) ranges from 40 to 120 at 150mA collector current and 10V collector-emitter voltage.

 

The transistor features low saturation voltages: collector-emitter saturation voltage of 1.5V maximum and base-emitter saturation voltage of 1.3V maximum at 150mA/15mA. Switching times are specified with turn-on time of 200µs and turn-off time of 1000µs maximum.

 

The 2N697 is housed in a TO-5 metal can package (TO-205AA style) with through-hole mounting. It operates over a junction temperature range of -65°C to +200°C.

2N697 Quick Information

Product Type: Transistor - Bipolar (BJT) - Single
Canonical Name: 2N697 NPN Medium Power Silicon Switching Transistor
Subcategory: Single NPN BJT

2N697 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N697 Estimated Pricing

Qty Low High
1+ $16.91 $16.91
100+ $15.70 $15.70

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N697 Features

  • NPN medium power switching transistor.
  • Qualified per MIL-PRF-19500/99.
  • Collector-emitter breakdown voltage 40V.
  • DC current gain range 40-120.
  • TO-5 metal can package.

2N697 Applications

  • Used in switching and amplifier circuits.
  • Suitable for medium power applications.
  • Ideal for military and aerospace designs.
  • Can be used in industrial control systems.

2N697 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N697?

The minimum collector-emitter breakdown voltage is 40V at R_BE = 10Ω, I_C = 100mA.

What is the package type of the 2N697?

The 2N697 is available in a TO-205AA (TO-5-3 Metal Can) package, with a supplier device package of TO-5.

What is the operating temperature range of the 2N697?

The junction temperature range is -65°C to +200°C.

Is the 2N697 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

What is the DC current gain (hFE) of the 2N697?

The DC current gain ranges from 40 to 120 at I_C = 150mA, V_CE = 10V.

What are the switching times of the 2N697?

Turn-on time is 200µs maximum, turn-off time is 1000µs maximum.

What is the power dissipation of the 2N697?

Total power dissipation is 0.6W at 25°C ambient temperature and 2.0W at 25°C case temperature.

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