| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2N6901 is an N-Channel MOSFET manufactured by Microsemi Corporation. It features a drain-source voltage (Vdss) of 100V and a continuous drain current of 1.69A at 25°C case temperature. The on-resistance is 2.6 Ohm maximum at 1.07A drain current and 5V gate drive. Gate charge is 1 nC at 5V, and the gate threshold voltage is 2V maximum at 1mA drain current. The device requires a 5V drive voltage and can withstand a maximum gate-source voltage of ±10V. Power dissipation is rated at 8.33W at case temperature. The operating junction temperature range is -55°C to 150°C.
The MOSFET is packaged in a TO-205AF metal can, also known as TO-39, and is designed for through-hole mounting. This package provides robust mechanical and thermal performance for various applications. The 2N6901 is suitable for low-power switching and general-purpose amplification circuits where moderate voltage and current handling are required.
100V.
1.69A.
2.6 Ohm maximum at 1.07A drain current and 5V gate drive.
2V maximum at 1mA drain current.
-55°C to 150°C.
TO-205AF metal can (TO-39).
RoHS3 compliant (unverified).