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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HAR 2N6849 is an N-Channel MOSFET designed for high-reliability applications. It offers a maximum Drain-Source Voltage of -100V and can handle a continuous Drain Current of up to -6.5A at 25°C, with a reduced current of -4.1A at 100°C.
Key electrical characteristics include a low Static Drain-Source On-State Resistance, with values as low as 0.30 Ohms at a gate-source voltage of -10V and a drain current of -4.1A pulsed. The Gate-Source Voltage threshold ranges from -2.0V to -5.0V across different temperatures.
Dynamic characteristics are also specified, with a typical Turn-On Delay Time of 60ns and a Fall Time of 140ns under specific test conditions. The device operates within a temperature range of -55°C to +150°C and has a thermal resistance from junction to case of 5.0°C/W.
The MOSFET is housed in a TO package. It is available in standard, high-reliability screened (JANTX level), and RoHS compliant (-PBF suffix) versions.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating and storage temperature range for the 2N6849 is -55 to +150 °C.
The maximum drain-source voltage for the 2N6849 is -100 V.
The typical static drain-source on-state resistance is 0.30 Ω at VGS = -10V and ID = -4.1A pulsed.
The typical on-state gate charge is 34.8 nC.
The 2N6849 is supplied in a TO package.