| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6849 is a P-Channel enhancement mode MOSFET manufactured by Microsemi Corporation using metal oxide semiconductor technology. It is designed for switching and power management applications requiring a high-side P-Channel switch.
Key electrical parameters include a drain-source voltage rating of 100V, a continuous drain current of 6.5A (at case temperature), and a maximum on-resistance of 320mOhm with a 10V gate drive. The gate threshold voltage is 4V maximum at 250µA drain current, and the total gate charge is 34.8nC at 10V. Power dissipation is rated at 800mW in ambient and 25W at the case.
The device is housed in a TO-205AF (also known as TO-39) metal can package, designed for through-hole mounting. It operates over a junction temperature range of -55°C to 150°C, making it suitable for demanding environments.
The drain-source voltage rating (Vdss) is 100V.
The continuous drain current is 6.5A at case temperature.
The maximum on-resistance is 320mOhm at a drain current of 6.5A and gate-source voltage of 10V.
The maximum gate threshold voltage is 4V at a drain current of 250µA.
The maximum gate charge is 34.8nC at a gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The device is available in a TO-205AF (TO-39) metal can package for through-hole mounting.