| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Mounting Type | |
| Operating Mode | |
| Transistor Type |
The Vishay Dale 2N6806 is a P-Channel, Metal-Oxide Semiconductor Power MOSFET. It is designed for general-purpose power switching applications.
Key electrical specifications include a minimum breakdown voltage of 200V and a maximum continuous drain current of 6.5A. The drain-source on-resistance is a maximum of 0.8 ohm. It also has a pulsed drain current capability of up to 28A and an avalanche energy rating of 66 mJ.
This component is housed in a TO-204AA package with a flange mount. The package body is metal, and the terminals are pin/peg style, located at the bottom. The terminal finish is Tin Lead.
This MOSFET operates in enhancement mode and is constructed from silicon.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the 2N6806 is 200V.
The maximum continuous drain current (ID) for the 2N6806 is 6.5A.
The maximum drain-source on-resistance for the 2N6806 is 0.8 ohm.
The 2N6806 is supplied in a TO-204AA package with a flange mount.