Mfr Part #:

2N6806

Name: 2N6806
Brand: Infineon Technologies
SKU: 2N6806

Description:

POWER FIELD-EFFECT TRANSISTOR, P

Stock on Request

2N6806 Description

Short technical summary and product information.

POWER FIELD-EFFECT TRANSISTOR, P

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

IRF9230

Infineon Technologies

200V, P-CHANNEL REPETITIVE AVALA

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	6.5A (Tc)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	75W (Tc)
Rds On (Max) @ Id, Vgs	940mOhm @ 6.5A, 10V
Supplier Device Package	TO-204AA (TO-3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA