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2N6796 The 2N6796 is an N-Channel MOSFET from On Semiconductor, designed for high-reliability applications. It features a 100V drain-source voltage and a TO-205 package.
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2N6796

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Mfr Name: On Semiconductor
On Semiconductor
The 2N6796 is an N-Channel MOSFET from On Semiconductor, designed for high-reliability applications. It features a 100V drain-source voltage and a TO-205 package.
✓ Total Stock: 5 pcs
$ Price Range: $0.99

2N6796 Available from 1 distributor

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2N6796 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2N6796 Description

Short technical summary and product information.

The 2N6796 is a high-reliability N-Channel MOSFET manufactured by On Semiconductor. This component is designed for demanding applications requiring robust performance and stability.

 

Key electrical characteristics include a maximum drain-source voltage of 100V and a continuous drain current of up to 8.0A at 25°C case temperature. The gate-source voltage range is ±20V, with a threshold voltage typically between 2.0V and 4.0V. Static drain-source on-state resistance is specified as low as 0.18 Ω at 10V gate drive and 5.0A drain current.

 

Dynamic characteristics are also well-defined, with typical values for gate charge (Qg) of 6.34 nC and gate-to-drain charge (Qgd) of 16.59 nC. Switching performance includes a turn-on delay of 30ns and a fall time of 45ns under specified test conditions.

 

Packaged in a TO-205 case, this MOSFET is suitable for through-hole mounting. The operating and storage temperature range is -55°C to +150°C, ensuring operation in a wide variety of environmental conditions. It is available in RoHS3 compliant and non-RoHS versions.

2N6796 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: 2N6796 N-Channel MOSFET
Subcategory: N-Channel

2N6796 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N6796 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N6796 Features

  • 100V drain-source breakdown voltage.
  • 8.0A maximum drain current.
  • Low on-resistance of 0.18 Ω typical.
  • TO-205 package for through-hole mounting.
  • Wide operating temperature range.

2N6796 Applications

  • Suitable for high-reliability applications.
  • Power switching circuits.
  • General purpose discrete component.
  • Industrial control systems.

2N6796 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the 2N6796 MOSFET?

The maximum drain-source voltage for the 2N6796 is 100V.

What is the typical on-state resistance of the 2N6796 MOSFET?

The typical on-state resistance (RDS(on)) is 0.18 Ω at 10V gate drive and 5.0A drain current.

What is the operating temperature range for the 2N6796 MOSFET?

The operating and storage temperature range is -55°C to +150°C.

What package type is the 2N6796 MOSFET supplied in?

The 2N6796 MOSFET is supplied in a TO-205 case.

Is the 2N6796 MOSFET RoHS compliant?

The product is listed as RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the 2N6796 MOSFET?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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