| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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74 pcs
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74 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6796 is a high-reliability N-Channel MOSFET manufactured by Vishay Dale. It features a maximum Drain-Source Voltage of 100V and a continuous Drain Current of 8A at 25°C case temperature, with a reduced current rating of 5A at 100°C case temperature. The device offers a low static drain-source on-state resistance, with a typical value of 0.18 Ohms at 10V gate-source voltage and 5A drain current.
Designed for demanding applications, the 2N6796 operates within a temperature range of -55°C to +150°C. Its electrical characteristics include a gate-source voltage threshold between 2.0V and 4.0V. Dynamic characteristics such as gate charge and switching times are also specified, with a turn-on delay of 30ns and a fall time of 45ns under specific test conditions.
The MOSFET is packaged in a TO-205 case, suitable for through-hole mounting. Its high-reliability screening per MIL-PRF-19500, JANTX level, makes it suitable for defense and aerospace applications. Options for RoHS compliance are available by adding a '-PBF' suffix.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating and storage temperature range for the 2N6796 is -55°C to +150°C.
The maximum continuous drain current for the 2N6796 at a case temperature of 25°C is 8.0A.
The Drain-Source Breakdown Voltage (V(BR)DSS) for the 2N6796 is 100V.
The typical Static Drain-Source On-State Resistance (rDS(on)) is 0.18 Ohms when measured at VGS = 10V and ID = 5.0A pulsed.
The 2N6796 MOSFET is supplied in a TO-205 case.