| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6796 is an N-Channel MOSFET manufactured by SML. This component is designed for high-reliability applications and is screened per MIL-PRF-19500, JANTX level.
Key electrical characteristics include a drain-source breakdown voltage of 100V and a continuous drain current of 8.0A at 25°C case temperature. The gate-source voltage threshold ranges from 2.0V to 4.0V. Static drain-source on-state resistance is as low as 0.18 Ohms at 10V gate drive and 5.0A drain current.
This MOSFET operates within a temperature range of -55°C to +150°C. It is housed in a TO-205 package, suitable for through-hole mounting.
The 2N6796 is available in standard, RoHS compliant (-PBF suffix), and high-reliability (HR suffix) versions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating and storage temperature range for the 2N6796 is -55°C to +150°C.
The maximum drain-source voltage for the 2N6796 is 100V.
The continuous drain current at 25°C case temperature for the 2N6796 is 8.0A.
The static drain-source on-state resistance is 0.18 Ohms at VGS=10V and ID=5.0A pulsed.
The 2N6796 MOSFET is supplied in a TO-205 package.