| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2N6796 is an N-Channel enhancement-mode MOSFET manufactured by Microsemi Corporation. It features a drain-to-source breakdown voltage of 100V and a continuous drain current rating of 8A at a case temperature of 25°C. The maximum on-resistance is 180 mOhm at a drain current of 5A and gate-source voltage of 10V. The gate threshold voltage is 4V maximum at 250µA drain current, and the total gate charge is 6.34 nC at Vgs=10V. The device is designed for a drive voltage of 10V and can withstand a maximum gate-source voltage of ±20V.
Power dissipation is rated at 800 mW at an ambient temperature of 25°C and 25W at a case temperature of 25°C. The operating junction temperature range is -55°C to 150°C. The MOSFET is housed in a through-hole TO-205AF Metal Can package, also known as TO-39, which allows for easy mounting on printed circuit boards.
This component is suitable for switching and linear amplification applications where moderate voltage and current levels are required. Its low gate charge and on-resistance contribute to efficient switching performance. The device is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.
The drain-source voltage (Vdss) is 100V.
The continuous drain current is 8A at a case temperature of 25°C.
It comes in a TO-205AF Metal Can package, also known as TO-39.
The operating junction temperature range is -55°C to 150°C.
Yes, it is listed as RoHS3 Compliant, but this status is unverified.
The maximum on-resistance is 180 mOhm at a drain current of 5A and gate-source voltage of 10V.
The maximum gate threshold voltage is 4V at a drain current of 250µA.