| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6788 is a single N-Channel enhancement-mode MOSFET designed for general-purpose switching and amplification applications. With a maximum drain-source voltage of 100V and continuous drain current of 6A (Tc), it provides efficient power handling in a compact through-hole package. The device features a low on-resistance of 300mOhm at 3.5A and 10V gate drive, and a gate charge of 18nC for fast switching performance. The threshold voltage is 4V maximum at 250µA drain current. The MOSFET is rated for a maximum power dissipation of 800mW at case temperature and operates over a junction temperature range of -55°C to 150°C. It is packaged in a TO-205AF metal can, also known as TO-39, suitable for through-hole mounting. Compliance data indicates RoHS3 compliance, MSL level 1 unlimited, and REACH unaffected, though these are unverified.
The maximum drain-source voltage (Vdss) is 100V.
It is available in a TO-205AF metal can package, also known as TO-39.
The junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this status is unverified.
The continuous drain current is 6A at case temperature.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum on-resistance is 300mOhm at 3.5A and 10V gate drive.