| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6786 is an N-Channel power MOSFET manufactured by Harris Semiconductor. It is designed for switching and amplification applications requiring high voltage capability. The device has a maximum drain-to-source voltage of 400V and a continuous drain current of 1.25A at case temperature (Tc).
Key electrical characteristics include a maximum on-resistance of 3.7 Ohms at a gate drive of 10V and drain current of 1.25A. The gate threshold voltage is 4V at 250µA drain current. The device can handle a maximum power dissipation of 15W at case temperature. Input capacitance is 170pF at 25V drain-source voltage, and total gate charge is 12nC at 10V gate-source voltage.
The 2N6786 is housed in a TO-205AF metal can package (also known as TO-39) and is through-hole mountable. It operates over a junction temperature range of -55°C to 150°C. The maximum gate-source voltage is ±20V. This MOSFET is suitable for high-voltage switching circuits, power supplies, and motor control applications where through-hole mounting is preferred.
The maximum drain-source voltage is 400V.
The maximum drain current is 1.25A at case temperature (Tc).
The maximum on-resistance is 3.7 Ohms at a drain current of 1.25A and gate-source voltage of 10V.
The 2N6786 is available in a TO-205AF metal can package, also known as TO-39. It is through-hole mountable.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4V at a drain current of 250µA.
The maximum power dissipation is 15W at case temperature (Tc).