| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50,000 pcs
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50000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6784 from Microsemi Corporation is an N-Channel MOSFET built on metal-oxide semiconductor technology. It is designed for through-hole mounting in a TO-205AF metal can package, also known as TO-39. This single transistor is rated for a drain-to-source voltage of 200 V and a continuous drain current of 2.25 A at a case temperature of 25°C.
Key electrical characteristics include a maximum on-resistance of 1.5 Ohms at a drain current of 1.5 A with a gate-to-source voltage of 0 V, and a maximum gate threshold voltage of 4 V at 250 µA drain current. The specified drive voltage is 10 V, and the maximum gate-source voltage rating is ±20 V. Total gate charge is 8.6 nC at Vgs = 10 V. Power dissipation is rated at 800 mW at ambient temperature and 15 W at case temperature.
The device operates over a junction temperature range of -55°C to +150°C. The TO-39 metal can package offers a robust, hermetically sealed enclosure suitable for discrete power switching and amplification circuits. The 2N6784 is marked as RoHS3 compliant, REACH unaffected, and MSL 1.
The maximum drain-source voltage (Vdss) is 200 V.
The operating junction temperature range is -55°C to +150°C.
The 2N6784 comes in a through-hole TO-205AF metal can, also known as TO-39.
The component is marked as RoHS3 compliant.
The continuous drain current is rated at 2.25 A at case temperature (Tc).
The maximum on-resistance is 1.5 Ohms at a drain current of 1.5 A and gate-source voltage of 0 V.
The total gate charge is 8.6 nC at a gate-source voltage of 10 V.