| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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41 pcs
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41 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6782 is an N-Channel enhancement-mode MOSFET manufactured by Microsemi Corporation. It features a drain-source voltage rating of 100V and a continuous drain current of 3.5A at 25°C case temperature. The on-resistance is 600mOhm maximum at 2.25A drain current and 10V gate drive. Gate threshold voltage is 4V maximum at 250µA. The device has a gate charge of 8.1nC at 10V, enabling moderate switching performance. Maximum power dissipation is 800mW at ambient temperature and 15W at case temperature. The operating junction temperature range is -55°C to 150°C. The 2N6782 is housed in a TO-205AF metal can package, also known as TO-39, and is designed for through-hole mounting. This MOSFET is suitable for low-to-medium power switching applications such as DC-DC converters, motor control, and load switching.
100V.
TO-205AF Metal Can (also known as TO-39).
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
8.1 nC at 10V.
3.5A at 25°C case temperature.