| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Power Dissipation (Max) (Maximum @ Tc) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2N6770 is a high-voltage N-Channel MOSFET manufactured by Microsemi Corporation. Designed for through-hole mounting, it is housed in a robust TO-204AE (TO-3) package suitable for demanding power applications.
This device offers a drain-to-source voltage (Vdss) of 500V and a continuous drain current of 12A at case temperature (Tc). It features a maximum on-state resistance (Rds(on)) of 500mOhm at a gate drive voltage of 10V. The gate charge is rated at 120 nC, and the maximum gate threshold voltage is 4V.
With a maximum power dissipation of 150W at case temperature and an operating junction temperature range of -55°C to 150°C, the 2N6770 is suited for high-power switching and amplification circuits. The device requires a 10V gate drive for optimal performance.
The TO-3 package provides excellent thermal performance and mechanical robustness, making it a standard choice for industrial and military-grade power electronics.
The 2N6770 has a maximum drain-to-source voltage (Vdss) of 500V.
The 2N6770 is available in a TO-204AE (TO-3) through-hole package.
The 2N6770 operates over a junction temperature range of -55°C to 150°C.
The 2N6770 is listed as RoHS3 Compliant.
The continuous drain current (Id) is 12A at case temperature (Tc).
The maximum on-state resistance (Rds(on)) is 500mOhm at Id = 12A and Vgs = 10V.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id = 250µA.