| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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465,000 pcs
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465000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6766 is an N-channel enhancement-mode MOSFET manufactured by Microsemi Corporation. It is designed for high-power switching applications with a maximum drain-source voltage of 200V and continuous drain current rating of 30A at case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 90 milliohms at 30A and 10V gate drive, a gate threshold voltage of 4V at 250µA, and a total gate charge of 115 nC at 10V. The device can dissipate up to 150W at the case and 4W at ambient temperature, with an operating junction temperature range of -55°C to 150°C.
The MOSFET uses standard MOSFET (Metal Oxide) technology and is rated for a maximum gate-source voltage of ±20V. The drive voltage for achieving the specified on-resistance is 10V.
The 2N6766 is supplied in a TO-204AE (TO-3) through-hole package, suitable for mounting on heatsinks or PCBs. The supplier device package is TO-3. This component is RoHS3 compliant and REACH unaffected, though these compliance statuses are based on unverified data.
The maximum drain-source voltage is 200V.
The 2N6766 is available in a TO-204AE (TO-3) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The 2N6766 is listed as RoHS3 compliant, but this is unverified.
The maximum continuous drain current is 30A at case temperature.
The maximum on-resistance is 90 milliohms at 30A and 10V gate drive.
The maximum power dissipation is 150W at case temperature and 4W at ambient.