| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
472 pcs
|
472 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2N6764 is an N-Channel MOSFET from Microsemi Corporation. It features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 38A at case temperature. The device has a maximum on-resistance (Rds(on)) of 65mOhm at 38A and 10V gate drive, and a total gate charge (Qg) of 125nC at 10V. The maximum gate threshold voltage is 4V at 250µA drain current. Power dissipation is rated at 150W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C. The MOSFET is housed in a through-hole TO-204AE (TO-3) package, suitable for robust mounting and thermal management. This component is designed for power switching and amplification applications in industrial and automotive environments.
100V.
TO-204AE (TO-3) through-hole package.
-55°C to 150°C.
RoHS3 compliant (unverified).
38A at case temperature.
65mOhm at 38A, 10V gate drive.
125nC at 10V gate drive.