| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,254 pcs
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2254 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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2N6760 is an N-Channel power MOSFET manufactured by Harris Semiconductor. It utilizes Metal Oxide (MOSFET) technology and is designed for high-voltage switching applications.
The device features a maximum drain-source voltage (Vdss) of 400V and a continuous drain current rating of 5.5A at case temperature. The maximum on-resistance is 1.22Ω at a gate drive of 10V. Gate charge is specified at 39 nC maximum at Vgs = 10V, and the gate threshold voltage is 4V maximum at 250µA drain current.
Thermal characteristics include a maximum power dissipation of 75W at case temperature and 4W at ambient temperature. The operating junction temperature range is -55°C to 150°C. The device is available in a TO-204AA (TO-3) through-hole package, suitable for high-power applications.
400V maximum.
TO-204AA (TO-3) through-hole package.
-55°C to 150°C junction temperature.
Listed as RoHS3 Compliant, but this status is unverified.
Maximum 1.22Ω at 5.5A and 10V gate drive.
5.5A at case temperature.
Maximum 39 nC at 10V gate-source voltage.