| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | 8807/8300/8325 | On Request | On Request |
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| Manufacturer Name | |
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| SVHC Present |
The 2N6756 is an N Channel MOSFET manufactured by Vishay Dale, designed for power switching and amplification applications. This component comes in a TO3 package, indicating its suitability for applications requiring robust thermal management and high power handling capabilities.
Key electrical specifications include a Drain-Source Breakdown Voltage (Vbr DSS) of 100V and a maximum continuous Drain Current (Id Max) of 14A. The device also features a maximum power dissipation (Max. PD) of 75W and a maximum Drain-Source On Resistance (Rds On) of 180mΩ. Its operating temperature range extends up to 150°C, making it reliable in demanding environments.
With a maximum input capacitance (Ciss) of 800pF and a maximum fall time (t(f)) of 45ns, the 2N6756 offers moderate switching characteristics. The forward transconductance (gfs) ranges from a minimum of 4.0S to a maximum of 12S, indicating its amplification capabilities. The component is designed for through-hole mounting.
This MOSFET is suitable for a variety of industrial and commercial applications where high current and voltage handling are required. Its specifications suggest use in power supplies, motor control circuits, and other power management systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N6756 has a drain-source breakdown voltage of 100V.
The maximum continuous drain current is 14A.
The maximum power dissipation is 75W.
The on-resistance is 180mΩ.
The maximum operating temperature is 150°C.
The 2N6756 is available in a TO3 through-hole case.
Rise time is 75ns and fall time is 45ns.
