| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,777 pcs
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8777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6678 is a high-voltage NPN bipolar junction transistor manufactured by Microchip Technology. Designed for through-hole mounting, it is housed in a TO-204AA (TO-3) metal can package with a supplier device package of TO-204AD.
This transistor offers a collector-emitter breakdown voltage (Vce) of 400V and a continuous collector current (Ic) rating of 15A. It dissipates up to 3W of power and provides a minimum DC current gain (hFE) of 15 at a test condition of 1A collector current and 3V collector-emitter voltage. The maximum Vce saturation voltage is 1V at a base current of 3A and collector current of 15A.
The device operates over a wide temperature range from -65°C to 200°C, making it suitable for demanding environments. The TO-3 package provides robust mechanical support and efficient heat dissipation for power applications.
The collector-emitter breakdown voltage (Vce) is 400V.
The maximum continuous collector current (Ic) is 15A.
The 2N6678 uses a TO-204AA, TO-3 through-hole package with a supplier device package of TO-204AD (TO-3).
The operating temperature range is -65°C to 200°C.
The RoHS status is listed as RoHS3 Compliant, but this data is unverified and should be confirmed with the manufacturer.
The minimum DC current gain (hFE) is 15 at a test condition of Ic=1A and Vce=3V.
The power dissipation (Pd) is 3W.