LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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The STMicroelectronics 2N6675 is a high-power NPN silicon transistor designed for demanding switching applications. It is available in a TO-3 (TO-204AA) package, suitable for through-hole mounting.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of up to 400V for the 2N6675 variant and a continuous collector current (IC) of up to 15A. The transistor offers a maximum collector-emitter saturation voltage (VCE(sat)) of 1.0V at 10A and a base-emitter saturation voltage (VBE(sat)) of 1.5V at 10A.
With a thermal resistance junction-to-case (RθJC) of 1°C/W and an operating temperature range of -65°C to +200°C, the 2N6675 is built for robust performance. Its design is ideal for use in regulators, inverters, and deflection circuits where high voltage and speed are critical.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) for the 2N6675 is 400 Vdc at an IC of 200 mA dc.
The maximum continuous collector current (IC) for the 2N6675 is 15 A dc.
The 2N6675 is available in a TO-3 (TO-204AA) package.
The operating and storage temperature range for the 2N6675 is -65 to +200 °C.
The thermal resistance from junction to case (RθJC) for the 2N6675 is 1 °C/W.
