| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
74 pcs
|
74 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6667G is a PNP Darlington power transistor manufactured by On Semiconductor. It features a collector-emitter voltage (VCEO) of 60V and a continuous collector current rating of 10A. The device offers a high DC current gain (hFE) of at least 1000 at 5A, 3V, with typical gain of 3500 at 4A.
Designed for general-purpose amplifier and low-speed switching applications, the transistor has a maximum collector-emitter saturation voltage of 3V at 100mA base current and 10A collector current. Power dissipation is rated at 65W at case temperature 25°C, with derating above 25°C.
The device is housed in a TO-220-3 through-hole package (TO-220AB), suitable for easy mounting on heatsinks. It is Pb-free and RoHS compliant. The operating junction temperature range is -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 74+ | $5.41 | $5.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V minimum (VCEO).
TO-220-3 (TO-220AB) through-hole package.
-65°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant and Pb-free.
Minimum 1000 at 5A, 3V; typical 3500 at 4A.
10A continuous.
65W at case temperature 25°C.