| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6661 is an N-Channel enhancement-mode vertical DMOS field-effect transistor. It features a drain-to-source voltage of 90V and a maximum drain current of 860mA at Tc=25°C. The device offers a low typical gate threshold voltage of 0.8V to 2V, enabling drive at logic-level voltages.
This MOSFET exhibits a maximum on-resistance of 4 Ohms at a gate drive of 10V and 1A drain current. It has an input capacitance of 50pF at Vds=25V, supporting fast switching speeds. The device operates over a junction temperature range of -55°C to 150°C.
The 2N6661 is housed in a TO-205AD / TO-39-3 metal can package with through-hole mounting and three wire leads. It is designed for switching and amplification applications requiring high breakdown voltage and low drive requirements.
The 2N6661 has a maximum drain-to-source voltage of 90V.
The maximum drain current is 860mA at a case temperature (Tc) of 25°C. Note: the datasheet specifies 350mA continuous drain current, indicating a possible data conflict.
The operating junction temperature range is -55°C to 150°C.
The 2N6661 is available in a TO-205AD / TO-39-3 metal can through-hole package. The supplier device package is TO-39.