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2N6661 2N6661 is an N-Channel enhancement-mode MOSFET from Microchip Technology. It features 90V drain-source voltage, 350mA drain current, and 4 Ohm on-resistance in a TO-39 package.
Mfr Part #:

2N6661

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
2N6661 is an N-Channel enhancement-mode MOSFET from Microchip Technology. It features 90V drain-source voltage, 350mA drain current, and 4 Ohm on-resistance in a TO-39 package.
Total Stock: 2,500 pcs
$ Price Range: $14.04 - $15.90

2N6661 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

2N6661 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drain-to-source breakdown voltage
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Body Leakage Current
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Zero Gate Voltage Drain Current
gate_threshold_voltage (Minimum/Typical/Maximum @ VDS=VGS, ID=1.0 mA)

2N6661 Description

Short technical summary and product information.

The 2N6661 is an N-Channel enhancement-mode vertical DMOS FET from Microchip Technology. It is designed for switching and amplification applications requiring high input impedance, fast switching speeds, and low power drive. Key electrical characteristics include a maximum drain-source voltage of 90V, continuous drain current of 350mA, and a maximum on-resistance of 4 Ohm at VGS=10V and ID=1A. The gate threshold voltage ranges from 0.8V to 2.0V at ID=1mA. Input capacitance is 50pF at VDS=24V, contributing to fast switching performance. The device is free from secondary breakdown and thermal runaway due to its positive temperature coefficient, and it includes an integral source-drain diode.

 

The 2N6661 is available in a TO-205AD / TO-39-3 Metal Can package for through-hole mounting. It can dissipate up to 6.25W at case temperature and operates over a junction temperature range of -55°C to 150°C. Typical applications include motor controls, converters, amplifiers, switches, power supply circuits, and drivers for relays, solenoids, lamps, and displays. The device is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).

2N6661 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: 2N6661 N-Channel MOSFET 90V 350mA TO-39
Subcategory: Single MOSFET

2N6661 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N6661 Estimated Pricing

Qty Low High
1+ $15.90 $15.90
25+ $14.57 $14.57
100+ $14.04 $14.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N6661 Features

  • N-Channel enhancement-mode vertical DMOS FET.
  • 90V drain-source voltage rating.
  • 350mA continuous drain current.
  • 4 Ohm on-resistance at 10V drive.
  • TO-39 through-hole metal can package.

2N6661 Applications

  • Motor control and converter circuits.
  • Amplifiers and switching applications.
  • Relay, solenoid, and lamp drivers.
  • Power supply and driver circuits.

2N6661 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the 2N6661?

90V maximum.

What is the package type of the 2N6661?

TO-205AD, TO-39-3 Metal Can (through-hole).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the 2N6661 RoHS compliant?

Listed as RoHS3 Compliant, but this is unverified.

What is the maximum drain current?

350mA (at junction temperature).

What is the on-resistance of the 2N6661?

4 Ohm maximum at ID=1A, VGS=10V.

What is the gate threshold voltage range?

0.8V to 2.0V (at ID=1mA).

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